• DocumentCode
    1019970
  • Title

    Properties of Al-SrTiO3-ITO capacitors for microelectronic device applications

  • Author

    Konofaos, N. ; Evangelou, E.K. ; Wang, Z. ; Helmersson, U.

  • Author_Institution
    Comput. Eng. & Informatics Dept., Univ. of Patras, Greece
  • Volume
    51
  • Issue
    7
  • fYear
    2004
  • fDate
    7/1/2004 12:00:00 AM
  • Firstpage
    1202
  • Lastpage
    1204
  • Abstract
    Growth of SrTiO3 (STO) thin films on indium tin oxide (ITO) substrates took place by RF magnetron sputtering under various deposition conditions. Subsequent Al metallization created metal-insulator-metal (MIM) capacitors. The properties of such capacitors were investigated by means of structural and electrical measurements, revealing the films transparency, the dielectric constant, the switching time characteristics, and the trapped charges density. Dielectric constant values as high as 120 were obtained for low frequencies of around 2 kHz, the switching time was found to be 3.2 μs and the trapped charges were found equal to 2.9 nCcm-2. The results showed that the films were suitable for use in electronic devices where high capacitance is required and for potential applications in optical devices.
  • Keywords
    MIM devices; aluminium; dielectric thin films; indium compounds; micromechanical devices; sputter deposition; strontium compounds; thin film capacitors; 3.2 mus; Al metallization; Al-SrTiO3-InSnO; Al-SrTiO3-ITO; Al-SrTiO3-ITO capacitors; ITO substrates; MIM capacitors; RF magnetron sputtering; STO thin film growth; barium titanate; capacitance; deposition conditions; dielectric constant values; electrical measurement; electrical properties; electronic devices; films transparency; high-K dielectrics; indium tin oxide; metal-insulator-metal capacitors; microelectronic device applications; optical devices; structural measurement; switching time; trapped charges density; Density measurement; Dielectric constant; Dielectric substrates; Dielectric thin films; Indium tin oxide; MIM capacitors; Metal-insulator structures; Metallization; Radio frequency; Sputtering; Barium titanate; ITO; MIM; capacitors; electrical properties; high-$kappa$ dielectrics; indium tin oxide; metal–insulator–metal; sputtering; thin films;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2004.829900
  • Filename
    1308649
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1019970