Spacer Removal Technique for Boosting Strain in n-Channel FinFETs With Silicon-Carbon Source and Drain Stressors

Author

Liow, Tsung-Yang ; Tan, Kian-Ming ; Lee, Rinus T P ; Zhu, Ming ; Hoe, Keat-Mun ; Samudra, Ganesh S. ; Balasubramanian, N. ; Yeo, Yee-Chia

Author_Institution

Nat. Univ. of Singapore, Singapore

Volume

29

Issue

1

fYear

2008

Firstpage

80

Lastpage

82

Abstract

A novel and low-cost spacer removal technique proved successful in further enhancing the I_Dsat performance of already strained n-channel trigate FinFETs with SiC source and drain (S/D) stressors. This extra enhancement is attributed to increased longitudinal tensile channel stress as a result of increased stress coupling efficiency from the SiC S/D stressors to the channel. The electrical results also establish that this extra enhancement will become even more significant as physical gate lengths are scaled down.

Keywords

MOSFET; elemental semiconductors; silicon; SiC; boosting strain; drain stressors; longitudinal tensile channel stress; n-channel FinFET; silicon-carbon source; spacer removal technique; stress coupling efficiency; Boosting; Boundary conditions; Capacitive sensors; Fabrication; FinFETs; Laboratories; Microelectronics; Silicon carbide; Space technology; Tensile stress; FinFET; multiple-gate transistor (MuGFET); silicon-carbon; spacerless; strain; stress;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.910779

Filename

4408743