DocumentCode
1020233
Title
Forming Process Investigation of Cux O Memory Films
Author
Lv, H.B. ; Yin, M. ; Song, Y.L. ; Fu, X.F. ; Tang, L. ; Zhou, P. ; Zhao, C.H. ; Tang, T.A. ; Chen, B.A. ; Lin, Y.Y.
Author_Institution
Fudan Univ., Shanghai
Volume
29
Issue
1
fYear
2008
Firstpage
47
Lastpage
49
Abstract
The forming process, which is the first transition from fresh state to low resistance state, was investigated in CuxO memory films prepared by plasma-induced oxidation. X-ray photoelectron spectroscopy investigation of surface chemical bonds of CuxO films and Auger electron spectroscopy depth spectra show that the formation of a highly resistive CuO layer on the CuxO surface is the main reason for the requirement of a large forming voltage. After selectively deoxidizing the CuO into Cu2O, the need for the "forming" process disappears.
Keywords
Auger electron spectra; X-ray photoelectron spectra; bonds (chemical); copper compounds; forming processes; oxidation; plasma materials processing; random-access storage; semiconductor thin films; Auger electron spectroscopy depth spectra; CuO; X-ray photoelectron spectroscopy; forming process; memory films; plasma-induced oxidation; surface chemical bonds; Atomic force microscopy; Electrodes; Electrons; Oxidation; Plasmas; Semiconductor films; Semiconductor materials; Spectroscopy; Surface resistance; Voltage; $hbox{Cu}_{x}hbox{O}$
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2007.911619
Filename
4408744
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