Demonstration of High-Performance PMOSFETs Using $\hbox {Si}$ – $\hbox {Si}_{x}\hbox {Ge}_{1 - x}$

Through a systematic approach, PMOSFETs with strained quantum wells (QWs) in the Si-Ge system exhibiting high performance and low off-state leakage currents comparable to optimized gate stacks on Si are demonstrated. The encouraging results are due to selectively depositing Si-Si_xGe_1-x-Si heterostructure QWs, where it appears that the critical thickness requirements for these thin films based on the lattice constant mismatch are relaxed. Furthermore, the use of optimal advanced high-k dielectric and metal-gate electrode helped realize the good device characteristics.