• DocumentCode
    1020645
  • Title

    High-detectivity InAs0.85Sb0.15/InAs infra-red (1.8-4.8 μm) detectors

  • Author

    Mohammed, Kadri ; Capasso, Federico ; Logan, R.A. ; van der Ziel, J.P. ; Hutchinson, A.L.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, USA
  • Volume
    22
  • Issue
    4
  • fYear
    1986
  • Firstpage
    215
  • Lastpage
    216
  • Abstract
    We report the operation of broadband InAs0.85Sb0.15/ pn-junction photodetectors grown on InAs by liquid phase epitaxy. Despite the relatively large mismatch (≅1%) between the layers and the substrate the devices exhibit excellent zero bias detectivities (D*(70 K) = (1.5 × 1011 cm(Hz)1/2/W; D* (200 K) = 2 × 1010 cm(Hz)1/2/W at λ = 3.5 μm) and peak external quantum efficiencies of 40%.
  • Keywords
    III-V semiconductors; indium antimonide; infrared detectors; liquid phase epitaxial growth; photodetectors; photodiodes; 1.8 micron to 4.8 micron range; III-V semiconductors; IR detectors; InAs substrate; InAs0.85Sb0.15/InAs; LPE; broadband; high detectivity type; infrared type; liquid phase epitaxy; p- n junction photodetectors; photodiodes; zero bias detectivities;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860150
  • Filename
    4256338
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1020645