DocumentCode
1020660
Title
The small-signal inductive effect in a long P-I-N diode
Author
Nordman, J.E. ; Greiner, R.A.
Author_Institution
University of Wisconsin, Madison, Wis.
Volume
10
Issue
3
fYear
1963
fDate
5/1/1963 12:00:00 AM
Firstpage
171
Lastpage
177
Abstract
The small-signal impedance of the forward-biased p-i-n diode has been calculated. It is found that, for a certain range of bias voltages, the impedance of the intrinsic region can be approximated by a parallel combination of resistance and inductance. If the intrinsic region is sufficiently long the junction impedance becomes negligible in comparision to the i-region impedance and a high Q inductor results at low frequencies. Values of Q up to 18 are calculated.
Keywords
Conductivity; Doping; Frequency; Impedance; Inductance; Inductors; P-i-n diodes; Semiconductor diodes; Semiconductor process modeling; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1963.15171
Filename
1473474
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