DocumentCode
1020699
Title
Reducing Ground-Bounce Noise and Stabilizing the Data-Retention Voltage of Power-Gating Structures
Author
Kim, Suhwan ; Choi, Chang Jun ; Jeong, Deog-Kyoon ; Kosonocky, Stephen V. ; Park, Sung Bae
Author_Institution
Seoul Nat. Univ., Seoul
Volume
55
Issue
1
fYear
2008
Firstpage
197
Lastpage
205
Abstract
Power gating is one of the most effective techniques in reducing leakage power, which increases exponentially with device scaling. However, large ground bounces during abrupt changes of power mode may cause unwanted transitions in neighboring circuits, which should still be operating normally. We analyzed this ground-bounce noise and reduced it with novel power-gating structures that utilize holistic integrated device-circuit-architecture approaches. We control the amount of charge in the intermediate nodes of the circuit that passes through the sleep transistors during the wake-up transition and stabilize the minimum virtual power supply voltage required for data retention. These techniques have been proven in silicon using 65-nm bulk CMOS technology.
Keywords
CMOS integrated circuits; integrated circuit noise; CMOS technology scaling; data-retention voltage stability; ground-bounce noise reduction; holistic integrated device-circuit-architecture approaches; power-gating structures; virtual power supply voltage; CMOS technology; Energy consumption; Leakage current; MOSFETs; Noise reduction; Power supplies; Power system reliability; Switches; Switching circuits; Voltage; CMOS technology scaling; device/circuit codesign; ground-bounce noise; power-gating technique;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2007.911067
Filename
4408788
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