• DocumentCode
    1020699
  • Title

    Reducing Ground-Bounce Noise and Stabilizing the Data-Retention Voltage of Power-Gating Structures

  • Author

    Kim, Suhwan ; Choi, Chang Jun ; Jeong, Deog-Kyoon ; Kosonocky, Stephen V. ; Park, Sung Bae

  • Author_Institution
    Seoul Nat. Univ., Seoul
  • Volume
    55
  • Issue
    1
  • fYear
    2008
  • Firstpage
    197
  • Lastpage
    205
  • Abstract
    Power gating is one of the most effective techniques in reducing leakage power, which increases exponentially with device scaling. However, large ground bounces during abrupt changes of power mode may cause unwanted transitions in neighboring circuits, which should still be operating normally. We analyzed this ground-bounce noise and reduced it with novel power-gating structures that utilize holistic integrated device-circuit-architecture approaches. We control the amount of charge in the intermediate nodes of the circuit that passes through the sleep transistors during the wake-up transition and stabilize the minimum virtual power supply voltage required for data retention. These techniques have been proven in silicon using 65-nm bulk CMOS technology.
  • Keywords
    CMOS integrated circuits; integrated circuit noise; CMOS technology scaling; data-retention voltage stability; ground-bounce noise reduction; holistic integrated device-circuit-architecture approaches; power-gating structures; virtual power supply voltage; CMOS technology; Energy consumption; Leakage current; MOSFETs; Noise reduction; Power supplies; Power system reliability; Switches; Switching circuits; Voltage; CMOS technology scaling; device/circuit codesign; ground-bounce noise; power-gating technique;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2007.911067
  • Filename
    4408788