• DocumentCode
    1020839
  • Title

    Electron transport across depleted region of a fine-gate GaAs:AlGaAs heterojunction FET

  • Author

    Thornton, Trevor J. ; Pepper, Matthew ; Ahmed, Hameeza ; Andrews, D. ; Davies, G.J.

  • Author_Institution
    Cavendish Laboratory, Cambridge, UK
  • Volume
    22
  • Issue
    5
  • fYear
    1986
  • Firstpage
    247
  • Lastpage
    249
  • Abstract
    The low-temperature characteristics of a depleted GaAs AlGaAs heterojunction FET with gate length of 1000 Å and width 10 ¿m show that the current is initially space-charge- limited. The onset of velocity saturation is observed as the source-drain bias is increased. The structure in the differential of resistance is attributed to the emission of optic phonons by hot electrons.
  • Keywords
    III-V semiconductors; aluminium compounds; electron-phonon interactions; field effect transistors; gallium arsenide; hot carriers; p-n heterojunctions; space-charge-limited conduction; GaAs/AlGaAs; MBE; depleted region; electron-phonon interactions; fine-gate type; heterojunction FET; hot electrons; low-temperature characteristics; optic phonon emission; source-drain bias; space-charge-limited current; velocity saturation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860170
  • Filename
    4256359
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1020839