DocumentCode
1020940
Title
Optical switching of a GaAs triangular barrier switch grown by MBE
Author
Rees, P.K. ; Parker, D.G. ; Barnard, J.A.
Author_Institution
GEC Research Ltd., Hirst Research Centre, Wembley, UK
Volume
22
Issue
5
fYear
1986
Firstpage
265
Lastpage
266
Abstract
A 100 ¿m-diameter GaAs triangular barrier switch (TBS) has been optically switched using a GaAlAs laser diode. The resulting transient response has been measured to have a leading edge of ~ 295 ps.
Keywords
III-V semiconductors; molecular beam epitaxial growth; optical elements; optoelectronic devices; semiconductor epitaxial layers; semiconductor growth; transient response; GaAlAs laser diode; GaAs triangular barrier switch; optical switching; transient response;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860182
Filename
4256371
Link To Document