Novel gate voltage ramping technique for the characterisation of metal-oxide-semiconductor capacitor charge trapping properties

A novel technique is proposed to characterise the charge trapping properties of MOS capacitors by using the gate voltage ramping test. The parameter I=1-I_g(t)/I_s(t+ Delta t) measured during gate voltage ramping reveals the dielectric charge trapping characteristics. Positive charge trapping before dielectric breakdown was observed using this technique. A comparison between I and flatband voltage shift, Delta V_fb, indicates that I gives the same information as Delta V_fb does at high stress fluences.