New GaSb/AlSb/GaSb/AlSb/InAs/AlSb/InAs triple-barrier interband tunnelling diode

Author

Yang, Lei ; Chen, Jone F. ; Cho, Andrew Y.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

Volume

26

Issue

16

fYear

1990

Firstpage

1277

Lastpage

1279

Abstract

A new GaSb/AlSb/GaSb/AlSb/InAs/AlSb/InAs triple-barrier interband tunnelling diode (TBIT) is proposed and demonstrated. A peak-current density as high as 7.2 kA/cm² and a peak-to-valley-current ratio of 10 at room temperature were exhibited. In this device resonant tunnelling effects occur for both the electron in the InAs conduction band and the light hole in the GaSb conduction band through the AlSb/GaSb/AlSb/InAs/AlSb triple-barrier structure. The tunnelling process is greatly diminished, indicating the quantisation effect for both electrons and light holes by narrowing the InAs well and the GaSb well. This triple-barrier structure is the first demonstrated tunnelling structure which utilises the resonant tunnelling effect of both electrons and holes.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; negative resistance effects; semiconductor junctions; tunnel diodes; GaSb-AlSb-GaSb-AlSb-InAs-AlSb-InAs; TBIT; electrons; heterojunctions; light holes; peak-current density; peak-to-valley-current ratio; quantisation effect; resonant tunnelling effects; room temperature; semiconductors; triple-barrier interband tunnelling diode;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19900822

Filename

130932