• DocumentCode
    1021838
  • Title

    Analysis of gate oxide shorts in CMOS circuits

  • Author

    Hao, Hong ; McCluskey, Edward J.

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., CA, USA
  • Volume
    42
  • Issue
    12
  • fYear
    1993
  • fDate
    12/1/1993 12:00:00 AM
  • Firstpage
    1510
  • Lastpage
    1516
  • Abstract
    The resistance dependence, voltage dependence, temperature dependence, and pattern dependence properties of CMOS logic gate operation in the presence of gate oxide shorts are analyzed. The analysis is based on realistic defect models that incorporate the resistive nature of gate oxide shorts and the difference between gate oxide shorts in n- and p-channel transistors
  • Keywords
    CMOS integrated circuits; integrated logic circuits; logic gates; semiconductor device models; CMOS circuits; defect models; gate oxide shorts; logic gate operation; n-channel transistors; p-channel transistors; pattern dependence; resistance dependence; temperature dependence; voltage dependence; CMOS logic circuits; Circuit optimization; Computer science; Data structures; IEEE Press; Laboratories; Pattern analysis; Semiconductor device modeling; Very large scale integration; Wire;
  • fLanguage
    English
  • Journal_Title
    Computers, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9340
  • Type

    jour

  • DOI
    10.1109/12.260643
  • Filename
    260643
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1021838