Monolithic integrated photoreceiver implemented with GaAs/GaAlAs heterojunction bipolar phototransistor and transistors

Author

Wang, Huifang ; Ankri, D.

Author_Institution

Centre National d´Etudes des TÃ©lÃ©communications, Laboratoire de Bagneux, Bagneux, France

Volume

22

Issue

7

fYear

1986

Firstpage

391

Lastpage

393

Abstract

The first monolithic integrated photodetector-preamplifier implemented with GaAs/GaAlAs heterojunction phototransistor and transistors has been fabricated and tested. This photoreceiver has been designed for local networks of optical transmission links operating at 0.85 Â¿m wavelength with multimode fibres. A heterojunction phototransistor (HPT), two heterojunction bipolar transistors (HBTs) and four resistors are integrated in a 0.5 Ã— 0.5 mm2 GaAs chip. The photoreceiver with a 26 kÂ¿ external feedback resistor has a bandwidth of 80 MHz with a transimpedance gain of 7000 V/A. The noise measurements indicate that a minimum detectable power of Â¿30 dBm is obtained at 140 Mbit/s for an error rate of 10Â¿9.

Keywords

III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; integrated optoelectronics; optical communication equipment; optical fibres; phototransistors; receivers; 0.85 micron wavelength; 140 Mbit/s; GaAs chip; GaAs/GaAlAs; III-V semiconductors; bipolar transistors; heterojunction; integrated optoelectronics; local networks; monolithic IC; monolithic integrated photodetector; multimode fibres; optical communication equipment; optical transmission links; photoreceiver; phototransistor; preamplifier;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19860266

Filename

4256458