Ultra-low-noise millimeter-wave pseudomorphic HEMTs

Author

Lee, Robert E. ; Beaubien, Randall S. ; Norton, Robert H. ; Bacon, Jeff W.

Author_Institution

Linear Monolithics Inc., West Lake Village, CA, USA

Volume

37

Issue

12

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2086

Lastpage

2092

Abstract

Pseudomorphic high-electron-mobility transistors (PHEMTs) with gate lengths of 0.1 μm and based on the AlGaAs-InGaAs-GaAs material system are presented. The room-temperature device noise figure at 43 GHz is measured to be 1.32 dB (noise temperature=103 K) with 6.7 dB associated gain; when the device is cooled to 17 K, the noise figure falls to 0.36 dB (noise temperature=25 K) with 6.9 dB of associated gain. These pseudomorphic devices also show improved sensitivity to input noise match (N=0.13 at 43 GHz) compared with conventional HEMTs and MESFETs. These PHEMT devices have the lowest noise temperature and noise sensitivity (normalized to frequency) reported to date

Keywords

III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.36 dB; 1.32 dB; 17 K; 43 GHz; 6.7 dB; 6.9 dB; AlGaAs-InGaAs-GaAs material system; HEMTs; III-V semiconductor; MM-wave devices; high-electron-mobility transistors; microwave transistors; millimeter-wave; noise sensitivity; noise temperature; pseudomorphic devices; room temperature noise figure; ultralow noise devices; Gain measurement; HEMTs; Impedance matching; MESFETs; MODFETs; Millimeter wave measurements; Millimeter wave transistors; Noise figure; Noise measurement; PHEMTs;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.44126

Filename

44126