• DocumentCode
    1022000
  • Title

    Transient effect in thinned silicon-on-insulator devices

  • Author

    Vu, D.P.

  • Author_Institution
    CNET-CNS-BP 98, Meylan, France
  • Volume
    22
  • Issue
    8
  • fYear
    1986
  • Firstpage
    412
  • Lastpage
    413
  • Abstract
    In thin-film silicon-on-insulator devices, electrostatic coupling between the two Si-SiO2 interfaces gives rise to transient drain-source current. This effect should be considered in devising three-dimensional circuits.
  • Keywords
    insulated gate field effect transistors; integrated circuit technology; semiconductor-insulator boundaries; transients; IC technology; MOSFET; Si-SiO2 interfaces; electrostatic coupling; thin film SOI devices; three-dimensional circuits; transient drain-source current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860281
  • Filename
    4256474
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1022000