DocumentCode
1022111
Title
Reliability of 1.3 μm V-grooved inner-stripe laser diodes under high-power operation
Author
Oshiba, Saeko ; Matoba, Akihisa ; Horikawa, H. ; Kawai, Yusuke ; Sakuta, M.
Author_Institution
Oki Electric Industry Co. Ltd., Research Laboratory, Hachioji, Japan
Volume
22
Issue
8
fYear
1986
Firstpage
428
Lastpage
429
Abstract
Aging tests of 1.3 μm laser diodes were performed under extremely high power levels up to 85% of the maximum CW output powers. We have verified high reliability under high power levels as high as 75% of the maximum CW output powers at room temperature. The median lifetime is estimated to be 7×104 h at 75% of the maximum CW output power.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; life testing; reliability; semiconductor junction lasers; CW output powers; GaInAsP-InP laser; V-grooved inner-stripe laser diodes; ageing test; high-power operation; median lifetime; reliability; semiconductor laser;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860292
Filename
4256485
Link To Document