• DocumentCode
    1022520
  • Title

    High-resistance SNS sandwich-type Josephson junctions

  • Author

    Barrera, A.S. ; Beasley, M.R.

  • Author_Institution
    Universidad Nacional Autónoma de México, México
  • Volume
    23
  • Issue
    2
  • fYear
    1987
  • fDate
    3/1/1987 12:00:00 AM
  • Firstpage
    866
  • Lastpage
    868
  • Abstract
    We have investigated the behavior of SNS and SIS junctions with barriers in the vicinity of the Metal-Insulator (M/I) transition. We use Nb for the superconductor and amorphous-(Nb-Si) for the barrier. All junctions were made by means of electron-beam evaporation on Al2O3substrates. The junction areas were defined by the Selective Niobium Anodization Process (SNAP). We have made junctions down to 8 × 8 μm2and barrier thicknesses in range from 250 Å to 600 Å. The composition of the barrier was varied from 5 % Nb to 15 % Nb. Working on the metallic side of the M/I transition we observe μ-bridge-like I-V characteristics with RNA \\sim0.3 \\Omega -\\mu m2and IcRN \\sim 200 \\mu V.
  • Keywords
    Josephson devices; Electrodes; Fabrication; Insulation; Josephson junctions; Lithography; Metal-insulator structures; Niobium; Physics; Superconducting devices; Superconducting transmission lines;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1987.1064867
  • Filename
    1064867