DocumentCode
1022640
Title
High-speed response characteristics of GaAs optoelectronic integrated receivers
Author
Hamaguchi, Hiroki ; Makiuchi, M. ; Wada, O.
Author_Institution
Fujitsu Limited, Atsugi, Japan
Volume
22
Issue
9
fYear
1986
Firstpage
501
Lastpage
502
Abstract
The letter focuses on the measurement of pulse response characteristics of an optoelectronic integrated receiver in which a GaAs metal-semiconductor-metal (MSM) photodiode and a GaAs field-effect transistor amplifier are monolithically integrated on a GaAs substrate. The maximum parasitic capacitance was found to be negligible for the total capacitance at the amplifier input. We also verified a fast response of this receiver showing a rise time of 300 ps.
Keywords
III-V semiconductors; gallium arsenide; integrated optoelectronics; monolithic integrated circuits; optical communication equipment; receivers; FET amplifier; GaAs substrate; III-V semiconductors; MSM photodiode; field-effect transistor; high-speed response; maximum parasitic capacitance; measurement; metal-semiconductor-metal; monolithic IC; optical communication equipment; optoelectronic integrated receivers; pulse response characteristics;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860340
Filename
4256534
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