Sensitivity of a 40 GHz HEMT low-noise amplifier to material and processing variations

Author

Yuen, C. ; Nishimoto, C. ; Bandy, S. ; Zdasiuk, G.

Author_Institution

Varian Res. Center, Palo Alto, CA, USA

Volume

37

Issue

12

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2169

Lastpage

2170

Abstract

The design of a monolithic, single-stage low-noise amplifier at 40 GHz for application to satellite communication is presented. The amplifier includes a single 0.25-μm-gate-length HEMT active device with on-chip matching and biasing circuits. A gain of 8 dB and a noise figure of 4 dB were measured from 36 to 42 GHz for an amplifier with a mushroom gate profile. Using a triangular-gate-profile device with a lower gate-to-drain feedback capacitance, the amplifier achieves a 10 dB peak gain at 43 GHz. The chip size is 1.1×1.1 mm²

Keywords

MMIC; field effect integrated circuits; high electron mobility transistors; microwave amplifiers; satellite relay systems; 0.25 micron; 36 to 43 GHz; 4 dB; 8 to 10 dB; EHF; HEMT; LNA; MM-wave type; MMIC; biasing circuits; low-noise amplifier; material variations; monolithic microwave IC; mushroom gate profile; on-chip matching; processing variations; satellite communication; sensitivity; single-stage; triangular-gate-profile; Capacitance; Circuits; Feedback; Gain measurement; HEMTs; Low-noise amplifiers; Noise figure; Noise measurement; Satellite communication; Semiconductor device measurement;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.44140

Filename

44140