DocumentCode
1022938
Title
Effect of the notch on opto-electrical characteristics of abrupt heterojunctions
Author
Agusta, B. ; Lopez, A. ; Anderson, Richard L.
Volume
11
Issue
11
fYear
1964
fDate
11/1/1964 12:00:00 AM
Firstpage
533
Lastpage
533
Keywords
Charge carrier processes; Electrons; Gallium arsenide; Heterojunctions; P-n junctions; Photoconductivity; Photonic band gap; Radiative recombination; Semiconductor diodes; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1964.15402
Filename
1473790
Link To Document