• DocumentCode
    1022988
  • Title

    Polycrystalline silicon thin-film transistors with two-step annealing process

  • Author

    Bonnel, M. ; Duhamel, N. ; Haji, L. ; Loisel, B. ; Stoemenos, J.

  • Author_Institution
    France Telecom, Lannion, France
  • Volume
    14
  • Issue
    12
  • fYear
    1993
  • Firstpage
    551
  • Lastpage
    553
  • Abstract
    Thin-film transistors (TFTs) were fabricated from poly-Si crystallized by a two-step annealing process on glass substrates. The combination of low-temperature furnace annealing and high-temperature rapid thermal annealing leads to a significant improvement in the material quality. The TFTs obtained with this two-step annealing material exhibit better measured characteristics than those obtained by using conventional furnace annealing.<>
  • Keywords
    annealing; elemental semiconductors; insulated gate field effect transistors; rapid thermal processing; silicon; thin film transistors; Si; TFTs; glass substrates; high-temperature RTA; low-temperature furnace annealing; polycrystalline Si; polysilicon; rapid thermal annealing; thin-film transistors; two-step annealing process; Crystalline materials; Crystallization; Furnaces; Glass; Hydrogen; Rapid thermal annealing; Semiconductor films; Silicon; Substrates; Thin film transistors;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.260786
  • Filename
    260786
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1022988