Multicolor voltage-tunable quantum-well infrared photodetector

Author

Liu, H.C. ; Li, Jianmeng ; Thompson, J.R. ; Wasilewski, Z.R. ; Buchanan, M. ; Simmons, J.G.

Author_Institution

Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada

Volume

14

Issue

12

fYear

1993

Firstpage

566

Lastpage

568

Abstract

A novel concept for a quantum-well infrared photodetector (QWIP) with a spectral response peak tunable by an external voltage is described and tested experimentally. This multicolor detector structure is made by stacking conventional (one-color) QWIPs, separated by thin, heavily doped layers ( approximately=90 nm in the test structure). The most important feature is that externally applied DC voltage is distributed among the different one-color QWIPs according to their DC resistances. Each one-color QWIP therefore turns on sequentially in the order determined by its resistance.<>

Keywords

colour; infrared detectors; photodetectors; semiconductor quantum wells; 77 K; 82 K; 90 nm; DC resistance; QWIP stacks; current-voltage characteristics; differential resistance characteristics; external voltage tunability; externally applied DC voltage; heavily doped layers; multicolor detector structure; quantum-well infrared photodetector; spectral response peak; Detectors; Infrared spectra; Photoconductivity; Photodetectors; Quantum well devices; Quantum wells; Stacking; Testing; Tunneling; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.260791

Filename

260791