DocumentCode
1023429
Title
Quantization of dielectric flux in phase-quantum-tunnel junction
Author
Yoshikawa, N. ; Tayama, M. ; Akeyoshi, T. ; Kojima, M. ; Sugahara, M.
Author_Institution
Yokohama National University, Yokohama, Japan
Volume
23
Issue
2
fYear
1987
fDate
3/1/1987 12:00:00 AM
Firstpage
1130
Lastpage
1133
Abstract
The electrical properties of relatively long bridges made of very thin NbN film were investigated experimentally. When the bridge resistance 
the I-V characteristic showed the possibility of quantization of dielectric flux inside the bridge. On the other hand, highly resistive bridges ( 
KΩ) revealed a step structure in the IV relation when irradiated by electromagnetic waves. Since the current interval of the steps is proportional to the frequency of the wave, these bridges are thought to behave as phase-quantum-tunnel devices with properties dual to those of Josephson junctions.
the I-V characteristic showed the possibility of quantization of dielectric flux inside the bridge. On the other hand, highly resistive bridges ( KΩ) revealed a step structure in the IV relation when irradiated by electromagnetic waves. Since the current interval of the steps is proportional to the frequency of the wave, these bridges are thought to behave as phase-quantum-tunnel devices with properties dual to those of Josephson junctions.Keywords
Superconducting devices; Superconducting films; Tunnel devices/effects; Bridge circuits; Conductivity; Dielectrics; Granular superconductors; Josephson junctions; Quantization; Sputtering; Substrates; Superconducting films; Superconducting thin films;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1987.1064947
Filename
1064947
Link To Document