DocumentCode
1023611
Title
Millimetre-waveguide-mounted InGaAs photodetectors
Author
Bowers, John E. ; Burrus, C.A. ; Mitschke, Fedor
Author_Institution
AT&T Bell Laboratories, Holmdel Laboratories, Holmdel, USA
Volume
22
Issue
12
fYear
1986
Firstpage
633
Lastpage
635
Abstract
We describe the design and characteristics of InGaAs PIN photodetectors mounted in microwave waveguides for use in transmission of millimetre-wave modulation signals on optical carriers. For an experimental device operating to 60 GHz (5 mm wavelength), we show the wavelength dependence of responsivity, the spatial uniformity of response and the bias dependence of modulation bandwidth.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; optical fibres; optical links; photodiodes; EHF; InGaAs PIN photodetectors; MM-wave waveguide mounted photodetectors; bias dependence of modulation bandwidth; characteristics; design; experimental device; frequency 60 Hz; optical carriers; photodiodes; semiconductors; spatial uniformity of response; transmission of millimetre-wave modulation signals; wavelength dependence of responsivity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860434
Filename
4256632
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