• DocumentCode
    1023722
  • Title

    Monolithic integration of InGaAs/InP PIN PD with MISFET on stepless substrate

  • Author

    Ohtsuka, K. ; Sugimoto, Hiroshi ; Abe, Y. ; Matsui, Takashi ; Ogata, Hiroaki

  • Author_Institution
    Mitsubishi Electric Corporation, Central Research Laboratory, Amagasaki, Japan
  • Volume
    22
  • Issue
    12
  • fYear
    1986
  • Firstpage
    652
  • Lastpage
    653
  • Abstract
    A low-dark-current (1¿2 nA) InGaAs/InP single-heterostructure planar PIN PD was fabricated and integrated with an InP MISFET on stepless substrates. The characteristics of the PIN PD did not change with integration.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; monolithic integrated circuits; photodiodes; III-V semiconductors; InGaAs/InP; InP MISFET; MISFET; integrated optoelectronics; low-dark-current; monolithic integration; p-i-n device; photodiode; planar PIN; single-heterostructure; stepless substrate;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860446
  • Filename
    4256644
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1023722