• DocumentCode
    1023953
  • Title

    Modified Fukui model for high-frequency MESFETs

  • Author

    Oxley, C.H. ; Holden, A.J.

  • Author_Institution
    Plessey Research (Caswell) Ltd., Towcester, UK
  • Volume
    22
  • Issue
    13
  • fYear
    1986
  • Firstpage
    690
  • Lastpage
    692
  • Abstract
    The letter will describe a modified form of the Fukui noise model to describe the high-frequency noise performance of MESFETs.
  • Keywords
    Schottky gate field effect transistors; electron device noise; semiconductor device models; solid-state microwave devices; Fukui noise model; MESFETs; MM-wave frequency range; high-frequency noise performance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860472
  • Filename
    4256671
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1023953