• DocumentCode
    1024106
  • Title

    Superconducting beryllium films deposited by ion-beam-sputtering

  • Author

    Maeda, Y. ; Takei, K. ; Okamoto, M. ; Nakamura, K. ; Igarashi, M.

  • Author_Institution
    NTT Electrical Communications Laboratories, Ibaraki, Japan
  • Volume
    23
  • Issue
    2
  • fYear
    1987
  • fDate
    3/1/1987 12:00:00 AM
  • Firstpage
    1022
  • Lastpage
    1025
  • Abstract
    The properties of beryllium thin films deposited by ion-beam-sputtering (IBS-Be) are investigated, IBS-Be films with high superconducting transition temperatures (Tc´S = 6-7 K) have an amorphous-like structure. Tc´s show thermal stabitlity up to 480 K. IBS-Be/BeO/Pb junctions with low leakage conductance indicate IBS-Be base electrodes do not deteriorate and that the Be-oxidized layers function as good tunnel barriers, The deduced value of the electron density of states at the Fermi level remains as low as that for bulk beryllium. IBS-Be films are considered to be advantageous for applications to tunneling and Abrikosov vortex devices.
  • Keywords
    Beryllium materials/devices; Superconducting films; Amorphous materials; Argon; Crystallization; Diffraction; Electrons; Ion beams; Substrates; Superconducting films; Superconducting transition temperature; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1987.1065006
  • Filename
    1065006
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1024106