• DocumentCode
    1024560
  • Title

    Promotion of practical SIMOX technology by the development of a 100 mA-class high-current oxygen implanter

  • Author

    Izumi, Kiyotaka ; Omura, Y. ; Nakashima, S.

  • Author_Institution
    NTT Electrical Communications Laboratories, Atsugi Laboratories, Atsugi, Japan
  • Volume
    22
  • Issue
    15
  • fYear
    1986
  • Firstpage
    775
  • Lastpage
    777
  • Abstract
    A high-current oxygen implanter which has an acceleration energy of 200 keV and a beam current of 100 mA has been developed. This implanter has been used to form SIMOX wafers, on which p- and n-channel MOSFETs have been fabricated on a trial basis. Good electrical characteristics have been achieved with these MOSFETs. It has been shown that a 100 mA-class high-current oxygen implanter can promote SIMOX technology in a practical way.
  • Keywords
    CMOS integrated circuits; integrated circuit technology; ion implantation; oxygen; CMOS; MOSFETs; SIMOX technology; SIMOX wafers; acceleration energy; beam current; electrical characteristics; high current O implanter;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860532
  • Filename
    4256736
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1024560