DocumentCode
1025326
Title
GaAs optoelectronic integrated receiver array exhibiting high-speed response and little crosstalk
Author
Makiuchi, M. ; Hamaguchi, Hiroki ; Kumai, T. ; Wada, O.
Author_Institution
Fujitsu Limited, Atsugi, Japan
Volume
22
Issue
17
fYear
1986
Firstpage
893
Lastpage
894
Abstract
The letter focuses on the measurement of speed and crosstalk characteristics of a photoreceiver array which is composed of metal-semiconductor-metal (MSM) photodiodes and metal-semiconductor field-effect transistors (MESFETs) monolithically integrated on a semi-insulating (SI) GaAs substrate. We have obtained excellent eye diagrams at 2 Gbit/s, NRZ, and little crosstalk between nearest-neighbour channels of ¿27 dB at 1.2 GHz.
Keywords
III-V semiconductors; Schottky gate field effect transistors; crosstalk; integrated optoelectronics; photodetectors; photodiodes; III-V semiconductors; MESFETs; MSM photodiodes; crosstalk; eye diagrams; high-speed response; nearest-neighbour channels; optoelectronic integrated receiver array; photoreceiver; semi-insulating substrates;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860609
Filename
4256815
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