DocumentCode
1025405
Title
High-speed zero-bias waveguide photodetectors
Author
Bowers, John E. ; Burrus, C.A.
Author_Institution
AT&T Bell Laboratories, Holmdel, USA
Volume
22
Issue
17
fYear
1986
Firstpage
905
Lastpage
906
Abstract
We describe an InGaAsP waveguide PIN photodetector that (unlike conventional PINs) provides for light absorption perpendicular to current collection, a feature that results in high-speed, high-efficiency and relatively bias-insensitive operation. Our uncoated, packaged device has displayed impulse response of 40 ps (Tektronix S-4 sampling head) and efficiency of 25% at zero bias.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; optical waveguides; photodetectors; impulse response 40 ps; optical waveguides; p-i-n type; quantum efficiency; waveguide PIN photodetector; zero bias;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860617
Filename
4256823
Link To Document