• DocumentCode
    1025559
  • Title

    GaAs PIN electro-optic travelling-wave modulator at 1.3 μm

  • Author

    Lin, S.H. ; Wang, S.Y. ; Houng, Y.M.

  • Author_Institution
    Hewlett-Packard Laboratories, Palo Alto, USA
  • Volume
    22
  • Issue
    18
  • fYear
    1986
  • Firstpage
    934
  • Lastpage
    935
  • Abstract
    A GaAs PIN travelling-wave modulator operated at 1.3 μm has been fabricated from material grown by organometallic vapour phase epitaxy (OMVPE) on an n+ (100) GaAs substrate. The device has a constant Vπ of 8 V from DC to 10 GHz and an optical extinction ratio of 13 dB. The optical insertion loss of the device is 3.5 dB, and the 3 dB frequency bandwidth is measured to be 4.1 GHz, which is limited by the microwave slowing induced by the n+ substrate.
  • Keywords
    III-V semiconductors; electro-optical devices; gallium arsenide; integrated optics; optical modulation; optical waveguide components; PIN travelling-wave modulator; frequency bandwidth; microwave slowing; n+ substrate; optical extinction ratio; optical insertion loss; organometallic vapour phase epitaxy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860636
  • Filename
    4256843
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1025559