• DocumentCode
    1026521
  • Title

    Optical waveguides in In0.52Al0.48As grown on InP by MBE

  • Author

    Ritchie, S. ; Scott, E.G. ; Rodgers, P.M.

  • Author_Institution
    British Telecom Research Laboratories, Ipswich, UK
  • Volume
    22
  • Issue
    20
  • fYear
    1986
  • Firstpage
    1066
  • Lastpage
    1068
  • Abstract
    Planar and rib optical waveguides have been made in In0.52Al0.48As grown on InP substrates by molecular beam epitaxy. The evidence that In0.52Al0.48As has a higher refractive index than InP is at variance with the values obtained from existing theoretical models.
  • Keywords
    III-V semiconductors; aluminium compounds; indium compounds; molecular beam epitaxial growth; optical waveguides; refractive index; semiconductor growth; III-V semiconductor; In0.52Al0.48As; InAlAs-InP; InP; InP substrates; MBE; molecular beam epitaxy; optical waveguides; refractive index;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860731
  • Filename
    4256943
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1026521