DocumentCode
1026583
Title
Magnetic properties of NiFe films prepared using ion-beam sputtering
Author
Nishimura, C. ; Nagai, Y. ; Yanagisawa, K. ; Toshima, T.
Author_Institution
NTT Electrical Communication Laboratories, Tokyo, Japan
Volume
23
Issue
5
fYear
1987
fDate
9/1/1987 12:00:00 AM
Firstpage
2728
Lastpage
2730
Abstract
The magnetic properties of NiFe films in the thickness range of 1 to 3 μm prepared using ion-beam sputtering were investigated by varying parameters such as the grid system, composition ratio of the targets, accelerator voltage and the beam current bombarding the substrate. The effects of the ion-assist voltage and ion-assist current on magnetic and electrical properties were investigated and the deposition conditions for NiFe films with low coercive force and resistivity were clarified. Due to their optimization of the ion-assist voltage and current, the ion-beam sputtered NiFe films have the low coercive force and resistivity necessary for thin film head applications.
Keywords
Ion radiation effects; Magnetic films/devices; Nickel materials/devices; Accelerator magnets; Coercive force; Conductivity; Ion accelerators; Magnetic films; Magnetic properties; Particle beams; Sputtering; Substrates; Voltage;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1987.1065239
Filename
1065239
Link To Document