Cross-correlation measurement of the turn-on delay and pulsewidth of a Q-switched two-section semiconductor laser

Author

Sheng-Hui Yang ; Thedrez, Bruno J. ; Saddow, Stephen E. ; Wood, Colin ; Wilson, Rick ; Lee, Chi H.

Author_Institution

Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA

Volume

5

Issue

12

fYear

1993

Firstpage

1365

Lastpage

1368

Abstract

Cross-correlation techniques were employed for direct optical measurement of output versus electrical bias for a Q-switched two-section semiconductor laser. Since the switching scheme is not limited by external connections to the device, the ultrafast dynamics of the diode laser can be investigated. In particular, a turn-on-delay as small as 70 ps was recorded with picosecond accuracy. The FWHM and peak power of the Q-switched pulse were also measured. A numerical simulation was performed, and good agreement with experimental results was achieved.<>

Keywords

Q-switching; laser variables measurement; optical correlation; optical switches; semiconductor lasers; semiconductor switches; 70 ps; Q-switched pulse; Q-switched two-section semiconductor laser; cross-correlation measurement; direct optical measurement; electrical bias; numerical simulation; peak power; picosecond accuracy; pulsewidth; turn-on delay; turn-on-delay; ultrafast dynamics; Delay; Diode lasers; Electric variables measurement; Optical pulses; Optical recording; Power semiconductor switches; Pulse measurements; Semiconductor lasers; Space vector pulse width modulation; Ultrafast optics;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.262542

Filename

262542