The high-speed limit of FM response in semiconductor lasers

Author

Takakuwa, C. ; Morinaga, Motosayu ; Tohyama, Masaki ; Suzuki, Nobuo

Author_Institution

Mater. & Devices Res. Labs., Toshiba Corp., Kawasaki, Japan

Volume

5

Issue

12

fYear

1993

Firstpage

1371

Lastpage

1373

Abstract

The high-speed frequency modulation (FM) response has been investigated through rate equation analysis. The intrinsic limit of FM response has been found to be given by the product of FM efficiency, eta /sub FM/, and the FM bandwidth, B. This relation shows that a wide FM bandwidth means a small FM efficiency. Although the FM efficiency changes with the differential gain or the nonlinear gain coefficient, eta /sub FM/B is almost constant. The value of eta /sub FM/B was about 5 GHz/sup 2//mA for 1.5- mu m InGaAsP/InP lasers with 300- mu m cavity length. This limit has been confirmed experimentally.<>

Keywords

III-V semiconductors; frequency modulation; gallium arsenide; high-speed optical techniques; indium compounds; laser theory; optical modulation; semiconductor lasers; 1.5 micron; 300 micron; FM bandwidth; FM efficiency; InGaAsP-InP; InGaAsP/InP lasers; cavity length; differential gain coefficient; frequency modulation response; high-speed limit; nonlinear gain coefficient; rate equation analysis; semiconductor lasers; Bandwidth; Charge carrier density; Fiber lasers; Frequency modulation; Nonlinear equations; Nonlinear optics; Optical refraction; Optical variables control; Resonant frequency; Semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.262544

Filename

262544