Tunneling in the metal-insulator-semiconductor structure—I. Silicon-silicon dioxide, II. Thin film Al Al2O3-CdS and Al-Al2O3-CdSe

Author

Shewchun, J. ; Waxman, A.

Author_Institution

RCA Laboratories

Issue

42591

fYear

1966

Firstpage

677

Lastpage

677

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

DOI

10.1109/T-ED.1966.15813

Filename

1474403

Link To Document