DocumentCode
1027612
Title
MOVPE growth and characteristics of Fe-doped semi-insulating InP layers
Author
Speier, P. ; Schemmel, G. ; Kuebart, W.
Author_Institution
SEL, Research Centre, Dept. ZT/FZWO, Stuttgart, West Germany
Volume
22
Issue
23
fYear
1986
Firstpage
1216
Lastpage
1218
Abstract
Semi-insulating Fe-doped InP layers have been grown by atmospheric-pressure MOVPE using ferrocene [Fe(C5H5)2], trimethylindium (TMI) and phosphine (PH3) as source materials. Resistivities at 294K of more than 8 × 108¿cm with a highest value of 1.5 × 109 have been achieved.
Keywords
III-V semiconductors; electronic conduction in crystalline semiconductor thin films; indium compounds; iron; semiconductor growth; vapour phase epitaxial growth; III-V semiconductor; InP:Fe semiinsulating layers; MOVPE growth; PH3; electrical characteristics; ferrocene; resistivity; trimethylindium;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860834
Filename
4257053
Link To Document