A W-band monolithic downconverter

Author

Chang, Kwo Wei ; Wang, Huei ; Bui, Stacey B. ; Chen, Tzu-hung ; Tan, Kin L. ; Ton, Thuy-Nhung ; Berenz, J. ; Dow, Gee Samuel ; Lin, T. Shyan ; Garske, Diane C. ; Liu, Louis C T

Author_Institution

TRW/ESG, Div. of Electron. & Technol., Redondo Beach, CA, USA

Volume

39

Issue

12

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

1972

Lastpage

1979

Abstract

The design, fabrication, and evaluation of a fully integrated W-band monolithic downconverter based on InGaAs pseudomorphic HEMT technology are presented. The monolithic downconverter consists of a two-stage low-noise amplifier and a single-balanced mixer. The single-balanced mixer has been designed using the HEMT gate Schottky diodes inherent to the process. Measured results of the complete downconverter show conversion gain of 5.5 dB and a double-sideband noise figure of 6.7 dB at 94 GHz. Also presented is the downconverter performance characterized over the -35°C to +65°C temperature range. The downconverter design was a first pass success and has a high circuit yield

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; frequency convertors; gallium arsenide; high electron mobility transistors; indium compounds; mixers (circuits); -35 to 65 degC; 5.5 dB; 6.7 dB; 94 GHz; EHF; HEMT gate Schottky diodes; InGaAs; MM-wave type; W-band; conversion gain; double-sideband noise figure; low-noise amplifier; millimetre wave operation; monolithic downconverter; pseudomorphic HEMT technology; single-balanced mixer; two-stage LNA; Fabrication; Gain measurement; HEMTs; Indium gallium arsenide; Integrated circuit measurements; Low-noise amplifiers; Noise figure; Noise measurement; PHEMTs; Schottky diodes;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.106535

Filename

106535