• DocumentCode
    1028211
  • Title

    Double heterojunction bipolar transistors using AlGaInP/GaAs/GaInP

  • Author

    Yow, H.K. ; Lee, Tae-Woo ; Houston, P.A. ; Lee, H.Y. ; Button, C.C. ; Roberts, Jeffrey S.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
  • Volume
    30
  • Issue
    2
  • fYear
    1994
  • fDate
    1/20/1994 12:00:00 AM
  • Firstpage
    167
  • Lastpage
    169
  • Abstract
    The first Al0.18Ga0.34In0.48P/GaAs/Ga0.52In0.43P double heterojunction bipolar transistors grown by metal organic vapour phase epitaxy are reported. They exhibit a current gain of 110 at high collector-emitter voltage and a small offset voltage of 30 mV. The addition of Al to the emitter has not adversely affected the quality of the emitter-base interface.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 30 mV; AlGaInP-GaAs-GaInP; AlGaInP/GaAs/GaInP structure; III-V semiconductors; collector-emitter voltage; current gain; double heterojunction bipolar transistors; emitter-base interface; metal organic vapour phase epitaxy; offset voltage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940092
  • Filename
    265322
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1028211