• DocumentCode
    1028366
  • Title

    Low-temperature CW operation of GaInAsP/InP surface-emitting laser with circular buried heterostructure

  • Author

    Watanabe, Issei ; Koyama, Fumio ; Iga, Kenichi

  • Author_Institution
    Tokyo Institute of Technology, Yokohama, Japan
  • Volume
    22
  • Issue
    25
  • fYear
    1986
  • Firstpage
    1325
  • Lastpage
    1327
  • Abstract
    The first CW operation of a GaInAsP surface-emitting laser has been demonstrated at 77 K. The active region was made to form a 15 ¿m-diameter circular mesa shape and was buried with p¿n current-confining layers. The minimum CW threshold current was 19 mA at 77 K, and single-longitudinal-mode oscillation has been achieved.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; semiconductor junction lasers; 19 mA; 77 K; CW threshold current; GaInAsP-InP; active region; circular buried heterostructure; circular mesa shape; low temperature CW operation; p- n current-confining layers; semiconductor laser; single-longitudinal-mode oscillation; surface-emitting laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860911
  • Filename
    4257133
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1028366