Pulse-driven silicon p-n junction avalanche oscillators for the 0.9 to 20 mm band

The fabrication of pulse-driven, diffused silicon p-n junction avalanche oscillators which have been operated at frequencies from 15 to 341 GHz is described. The experimental behavior of a large number of oscillators has been correlated with readily measurable properties of the p-n junctions, leading to first-order design parameters for construction of oscillators of this type usable at various frequencies into the submillimeter-wave region. Maximum peak power outputs ranged from 2 watts near 15 GHz to 75 mW at 115 GHz; the estimated peak power at 300 GHz was of the order of 1 mW.