• DocumentCode
    1028631
  • Title

    Waveguide-integrated pin photodiode on InP

  • Author

    Bornholdt, Carsten ; D¿¿ldissen, W. ; Fiedler, Fine ; Kaiser, Rene ; Kowalsky, Wolfgang

  • Author_Institution
    Heinrich-Hertz-Institut fÿr Nachrichtentechnik Berlin GmbH, Berlin, West Germany
  • Volume
    23
  • Issue
    1
  • fYear
    1987
  • Firstpage
    2
  • Lastpage
    4
  • Abstract
    An InGaAs PIN photodiode was vertically integrated with an inverted optical rib waveguide in InGaAsP. Guided light was transferred to and absorbed by the photodiode at a rate of 0.07dB/¿m. For detectors with sufficient length (>300¿m) a responsivity of 0.81 A/W was achieved at 1.3 ¿m wave-length.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical waveguides; photodiodes; 1.3 micron; III-V semiconductors; InGaAs-InGaAsP-InP; PIN photodiode; integrated optoelectronics; inverted optical rib waveguide; p-i-n diodes; vertical integration;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870002
  • Filename
    4257172
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1028631