• DocumentCode
    1028768
  • Title

    Doping uniformity and geometry of LSA oscillator diodes

  • Author

    Copeland, John A.

  • Author_Institution
    Bell Telephone Laboratories, Inc., Murray Hill, N. J.
  • Volume
    14
  • Issue
    9
  • fYear
    1967
  • fDate
    9/1/1967 12:00:00 AM
  • Firstpage
    497
  • Lastpage
    500
  • Abstract
    For maximum dc to RF power conversion efficiency, the dc and RF electric-field amplitudes must be properly related throughout the volume of a limited space-charge accumulation (LSA) diode. Space-charge due to a few percent fluctuation in the relative doping can distort the electric field enough to reduce the maximum attainable efficiency. Standing-wave effects with the diode limit the width in the direction of wave propagation to about 0.04 free-space wavelengths.
  • Keywords
    Charge carrier density; Diodes; Doping; Fluctuations; Gallium arsenide; Geometry; Oscillators; Power conversion; Radio frequency; Space charge;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1967.15993
  • Filename
    1474716
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1028768