• DocumentCode
    1029177
  • Title

    Epitaxial gallium arsenide for Gunn-effect oscillators

  • Author

    Wolfe, C.M. ; Foyt, A.G. ; Lindley, W.T.

  • Volume
    14
  • Issue
    9
  • fYear
    1967
  • fDate
    9/1/1967 12:00:00 AM
  • Firstpage
    629
  • Lastpage
    629
  • Keywords
    Charge carrier processes; Diodes; Electron traps; Epitaxial layers; Gallium arsenide; Gunn devices; Ionization; Laboratories; Microwave oscillators; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1967.16034
  • Filename
    1474757