Static random-access memory based on self-aligned-gate (Al,Ga)As/n+-GaAs superlattice modulation-doped FETs

Author

Arch, D.K. ; Abrokwah, J.K. ; Vold, P.J. ; Fraasch, A.M. ; Grung, B.L. ; Cirillo, N.C.

Author_Institution

Honeywell Inc., Physics Sciences Center, Bloomington, USA

Volume

23

Issue

2

fYear

1987

Firstpage

87

Lastpage

88

Abstract

A 64 bit, fully decoded static random-access memory (SRAM) has been fabricated utilising self-aligned-gate (Al,Ga)As/n+-GaAs superlattice modulation-doped FETs (MODFETs) for the first time. Read access times of 1.1 ns at 270 Â¿W/bit and minimum write-enable pulse widths less than 2 ns were demonstrated at room temperature. Typical room-temperature extrinsic transconductances and output conductances of 240 mS/mm and 7 mS/mm, respectively, were observed for the superlattice MODFET devices.

Keywords

III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; integrated circuit technology; integrated memory circuits; random-access storage; semiconductor superlattices; 1.1 ns; 2 ns; 64 bit; AlGaAs-GaAs; HEMT IC; MODFETs; SRAM; output conductances; room temperature; self-aligned-gate; static random-access memory; superlattice modulation-doped FETs; transconductances; write-enable pulse widths;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19870063

Filename

4257323