• DocumentCode
    1029849
  • Title

    High-speed modulation characteristics of a GaSb/AlGaSb multiquantum-well laser diode

  • Author

    Toba, H. ; Nosu, K.

  • Author_Institution
    NTT Electrical Communications Laboratories, Yokosuka, Japan
  • Volume
    23
  • Issue
    5
  • fYear
    1987
  • Firstpage
    188
  • Lastpage
    190
  • Abstract
    The high-speed modulation characteristics of a GaSb/AIGaSb multiquantum-well laser diode (¿ = 1.66¿m) are investigated. The longitudinal mode spectra over 1GHz modulation with quasi-single-mode and small frequency `chirping¿ were confirmed.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; laser modes; laser transitions; optical communication equipment; optical modulation; semiconductor junction lasers; 1 GHz; 1.66 micron; GaSb-AlGaSb; III-V semiconductors; MQW; chirping; high-speed modulation characteristics; longitudinal mode spectra; multiquantum-well laser diode; optical communication equipment; quasisingle mode; semiconductor laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870133
  • Filename
    4257425
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1029849