• DocumentCode
    1029872
  • Title

    Static 7 GHz frequency divider IC based on a 2 ¿m Si bipolar technology

  • Author

    Weger, P. ; Treitinger, L. ; Reimann, R. ; Rein, H.-M.

  • Author_Institution
    Siemens AG, Mÿnchen, West Germany
  • Volume
    23
  • Issue
    5
  • fYear
    1987
  • Firstpage
    192
  • Lastpage
    193
  • Abstract
    A static 8:1 frequency divider IC operating at up to 7 GHz has been realised using a preproduction silicon bipolar technology with 2 ¿m lithography. This technology is characterised by a self-aligned double polysilicon emitter-base structure and oxide wall isolation. The high upper frequency limit, not yet achieved with comparable 2 ¿m technologies, was attained by careful circuit design and optimisation.
  • Keywords
    bipolar integrated circuits; frequency dividers; 7 GHz; Si; bipolar technology; frequency divider IC; microlithography; monolithic IC; oxide wall isolation; polycrystalline emitter-base structure; self aligned technique; static type;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870135
  • Filename
    4257427
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1029872