DocumentCode
1030533
Title
Modeling of steady-state optical phenomena in transistors and diodes
Author
Gary, P.A. ; Linvill, John G.
Author_Institution
Bell Telephone Laboratories, Inc., Allentown, Pa.
Volume
15
Issue
5
fYear
1968
fDate
5/1/1968 12:00:00 AM
Firstpage
267
Lastpage
274
Abstract
A lumped model is derived for photodiodes and phototransistors from which steady-state spectral properties, such as quantum efficiency, can be determined. The model is derived in a manner such that its utility extends to regions of any length ω that is, there is no 
restriction, where 
represents the minority-carrier diffusion length in the region. The validity of the resulting model is demonstrated by showing that the lumped model predicts the empirically measured quantum efficiency of planar photodiodes to within 10 percent.
restriction, where represents the minority-carrier diffusion length in the region. The validity of the resulting model is demonstrated by showing that the lumped model predicts the empirically measured quantum efficiency of planar photodiodes to within 10 percent.Keywords
Electrons; Equations; Helium; Photodiodes; Phototransistors; Predictive models; Semiconductor diodes; Semiconductor impurities; Semiconductor process modeling; Steady-state;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1968.16177
Filename
1475079
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