Polarization-insensitive electroabsorption in strained GaInAs/AlInAs quantum well structures

Author

Wan, H.W. ; Chong, T.C. ; Chua, S.J.

Author_Institution

Center for Optoelectron., Nat. Univ. of Singapore, Singapore

Volume

6

Issue

1

fYear

1994

Firstpage

92

Lastpage

94

Abstract

The polarization-dependent electroabsorption in lattice-matched and strained GaInAs/AlInAs quantum well structures is studied using photocurrent spectral measurements. The results show that the application of a biaxial tensile strain by the appropriate selection of the Ga mole fraction and the well size reduces the difference between the transition energies of the heavy and light holes due to quantization, while a compressive strain further enhances the polarization dependence.<>

Keywords

aluminium compounds; electroabsorption; gallium arsenide; indium compounds; light polarisation; photoconductivity; semiconductor quantum wells; Ga mole fraction; GaInAs-AlInAs; GaInAs/AlInAs; biaxial tensile strain; compressive strain; heavy holes; lattice-matched; light holes; photocurrent spectral measurements; polarization dependence; polarization-insensitive electroabsorption; strained quantum well structures; transition energies; well size; Molecular beam epitaxial growth; Optical devices; Optical fiber polarization; Optical modulation; Optical polarization; Optical signal processing; Optical waveguides; Photoconductivity; Quantum well devices; Tensile strain;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.265900

Filename

265900