DocumentCode
1031007
Title
Magnetization reversal mechanism in CoCr media for perpendicular recording
Author
Cheng-Zhang, Li ; Lodder, Cock
Author_Institution
University of Twente, Enschede, The Netherlands
Volume
23
Issue
5
fYear
1987
fDate
9/1/1987 12:00:00 AM
Firstpage
2260
Lastpage
2262
Abstract
It has recently been shown [1] that hysteresis loss as a ftulction of the direction of the applied field can be used as a criteria to determine the reversal mechanism in CoCr films. In this paper we present hysteresis loss (
) and orientation ratio (OR) as function of the amplitude and direction of the applied field for low and high
sputtered CoCr films. The reversal behaviour depends strongly on the amplitude and direction of the field. The presence of all initial layer has an important influence on the type of reversal. The rotational mechanism governs the switching in high
films while the domain-wall reversal acts in the low coercivity film.
) and orientation ratio (OR) as function of the amplitude and direction of the applied field for low and high
sputtered CoCr films. The reversal behaviour depends strongly on the amplitude and direction of the field. The presence of all initial layer has an important influence on the type of reversal. The rotational mechanism governs the switching in high
films while the domain-wall reversal acts in the low coercivity film.Keywords
Magnetization reversal; Perpendicular magnetic recording; Coercive force; Crystallization; Magnetic anisotropy; Magnetic field measurement; Magnetic films; Magnetization reversal; Perpendicular magnetic anisotropy; Perpendicular magnetic recording; Semiconductor films; Tiles;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1987.1065647
Filename
1065647
Link To Document